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| TO-220F 8A Thyristor TF821S, TF841S, TF861S s Features qRepetitive peak off-state voltage: VDRM=200, 400, 600V qAverage on-state current: IT(AV)=8A qGate trigger current: IGT=15mA max qIsolation voltage: VISO=1500V(50Hz Sine wave, RMS) 13.0 min External Dimensions (Unit: mm) 3.30.2 16.90.3 8.40.2 4.00.2 10.00.2 4.20.2 C 0.5 2.8 3.90.2 0.80.2 a b 1.350.15 1.350.15 +0.2 0.85 -0.1 +0.2 0.45 -0.1 2.40.2 a. Part Number b. Lot Number qUL approved type available 2.54 2.20.2 2.54 (1). Cathode (K) (2). Anode (A) (3). Gate (G) (1) (2) (3) Weight: Approx. 2.1g sAbsolute Maximum Ratings Parameter Repetitive peak off-state voltage Repetitive peak reverse voltage Non-repetitive peak off-state voltage Non-repetitive peak reverse voltage Average on-state current RMS on-state current Surge on-state current Peak forward gate current Peak forward gate voltage Peak reverse gate voltage Peak gate power loss Average gate power loss Junction temperature Storage temperature Isolation voltage Symbol VDRM VRRM VDSM VRSM IT(AV) IT(RMS) ITSM IFGM VFGM VRGM PGM PG(AV) Tj Tstg VISO Ratings TF821S 200 200 300 300 TF841S 400 400 500 500 8.0 12.6 120 2.0 10 5.0 5.0 0.5 - 40 to +125 - 40 to +125 1500 TF861S 600 600 700 700 Unit V V V V A A A A V V W W C C V Conditions Tj= -40 to +125C, RGK =1k 50Hz Half-cycle sinewave, Continuous current, Tc=87C 50Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj=125C f f f 50Hz, duty 50Hz 50Hz, duty 10% 10% 50Hz Sine wave, RMS, Terminal to Case, 1 min. sElectrical Characteristics Parameter Off-state current Reverse current On-state voltage Gate trigger voltage Gate trigger current Gate non-trigger voltage Holding current Critical rate-of-rise of off-state voltage Turn-off time Thermal resistance Symbol IDRM IRRM VTM VGT IGT VGD IH dv/dt tq Rth Ratings min typ max 2.0 2.0 1.4 1.5 5.0 0.1 4.0 50 30 3.6 15 Unit mA mA V V mA V mA V/S S C/W Conditions Tj=125C, VD=VDRM(VRRM), RGK=1k TC=25C, ITM=15A VD=6V, RL=10, TC=25C VD=1/2 x VDRM, Tj=125C, RGK=1k RGK=1k, Tj=25C VD=1/2 x VDRM, Tj=125C, RGK=1k, CGK=0.033F Tc=25C Junction to case 16 TF821S, TF841S, TF861S vT - iT Characteristics (max) 100 50 ITSM Ratings 140 Initial junction temperature Tj=125C I TSM Gate Characteristics Gate trigger voltage VGT (V) 14 12 Surge on-state current ITSM (A) 120 10 ms 1 cycle 1 iT (A) vGF (V) Tj =125C 10 100 80 10 8 6 4 2 0 0 1 P G M 0 On-state current 0 10 Tj=25C 20 Tj= -20C 30 50Hz Tj = 25C 5 Gate voltage Gate trigger current IGT (mA) =5 60 40 20 1 5 10 50 100 W See graph at the upper right 2 3 1 0.8 1.0 2.0 3.0 On-state voltage vT ( V ) Number of cycle Gate current iGF (A) IT(AV) - PT(AV) Characteristics 20 IT(AV) - Tc Ratings 150 50Hz Half-cycle sinewave : Conduction angle Average on-state power PT(AV) (W) 50Hz Half-cycle sinewave : Conduction angle 180 Case temperature TC (C) 0 12 18 0 16 DC 125 0 180 0 12 30 60 90 100 75 =30 90 120 180 60 DC 8 = 50 4 25 0 0 5 10 15 0 0 5 10 15 Average on-state current IT(AV) (A) Average on-state current IT(AV) (A) Pulse trigger temperature Characteristics vgt (Typical) 2.0 Pulse trigger temperature Characteristics igt (Typical) tw trigger IGT DC gateat 25C current IH temperature Characteristics (Typical) igt tw 100 (VD=30V, RGK=1k) ) trigger VGT DC gateat 25C voltage ) vgt 30 ( 1.5 Tj =- 40C -20C Tj =- 40C 5 -20C 25C vgt ( Gate trigger voltage) at Ta and tw 1.0 25C 75C 125C igt (Gate trigger current ) at Ta and tw Holding current IH (mA) 10 50 ( 1 0.5 75C 125C 0.2 0.5 1 10 100 1000 10 5 3 -40 0.5 0.5 1 10 100 1000 0 25 50 75 100 Pulse width tw (s) Pulse width tw (s) Junction temperature Tj (C) VGT temperature Characteristics (Typical) 1.0 (VD=6V, RL=10) IGT temperature Characteristics (Typical) 50 30 (VD=6V, RL=10) Transient thermal resistance Characteristics (Junction to case) 10 0.8 Gate trigger current IGT (mA) Gate trigger voltage VGT (V) 0.6 10 Transient thermal resistance rth (C/W) 1 0.4 5 3 0.2 0 -40 0 25 50 75 100 125 1 - 40 0.1 1 10 0 25 50 75 100 125 10 2 10 3 10 4 Junction temperature Tj (C) Junction temperature Tj (C) t, Time (ms) Tj= -40C 2 125 10 5 17 |
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